Feng Gao

Accelerator RF Engineer


Feng Gao joined NSLS after he earned his PhD degree in Electrical Engineering at the Illinois Institute of Technology in 2009. As a graduate appointee, he worked for Argonne National Laboratory’s High Energy Physics Division at Argonne Wakefield Accelerator from 2005 to 2008, on high-power RF and millimeter-wave generation and extraction using the wakefield effect of an intense electron beam. His research interests include dielectric-loaded acceleration, wakefield generation and extraction, RF and microwave simulation, superconducting RF, etc. Feng is currently working on NSLS-II storage ring cavities/cryomodules.

Phone: 344-8135
Email: fgao@bnl.gov


Education

  • Ph.D. 2009: Electrical Engineering, Illinois Institute of Technology
  • M.S. 2004: Electrical Engineering , University of Electronic Science and Technology of China
  • B.S. 2001: Electrical Engineering , University of Electronic Science and Technology of China

All Publications